Eur. Phys. J. E (2009) 28: 361-368
https://doi.org/10.1140/epje/i2008-10427-y

Regular Article

Effect of non-zero Schottky barrier on the J-V characteristics of organic diodes

¹ National Physical Laboratory, Center for Organic Electronics, Dr K S Krishnan road, 110012, New Delhi, India
² Department of Physics and Astrophysics, University of Delhi, 110007, Delhi, India

^* e-mail: pankaj@mail.nplindia.ernet.in

Received: 3 July 2008
Revised: 26 November 2008
Accepted: 19 January 2009
Published online: 11 March 2009

Abstract

Current-voltage (J -Vcharacteristics of poly(3-hexylthiophene) (P3HT) are studied at different temperatures upto high voltages ∼ 20 V in the hole-only device configuration. The characteristics are studied in the temperature range 310-210K. In the intermediate voltage range the J -V characteristics follow J V ^l+1 , where l > 1 . As the voltage increases to high values J still varies as a power law i.e. as V^m, but contrary to the literature result m becomes < 2 . This behavior is explained theoretically in terms of non-zero injection Schottky barriers. The complete analytical expressions for the actual trap filled limit voltage (V′ _TFL) and J -V curves beyond V′ _TFL are presented.